Share Email Print
cover

Proceedings Paper

Performance optimization of Pnp InGaAs/InP heterojunction phototransistors
Author(s): Min Zhu; Jun Chen
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this paper, a two-terminal Pnp InP/InGaAs heterojunction phototransistor with a floating base (2T-HPT) is built based on TCAD. To optimize the device performance, the precise adjustments of base doping and base width have been investigated. Properly reducing the base width can greatly enhance the emitter injection efficiency. The effect of inserting a thin, undoped InGaAs layer in the base region of the HPT has also been investigated in detail. It is found the intrinsic layer between emitter and base can reduce the knee voltage and dark current of the HPT.

Paper Details

Date Published: 31 October 2016
PDF: 6 pages
Proc. SPIE 10019, Optoelectronic Devices and Integration VI, 1001911 (31 October 2016); doi: 10.1117/12.2245978
Show Author Affiliations
Min Zhu, Soochow Univ. (China)
Jun Chen, Soochow Univ. (China)


Published in SPIE Proceedings Vol. 10019:
Optoelectronic Devices and Integration VI
Xuping Zhang; Baojun Li; Changyuan Yu, Editor(s)

© SPIE. Terms of Use
Back to Top