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Proceedings Paper

Optical implementation of neural learning algorithms based on cross-gain modulation in a semiconductor optical amplifier
Author(s): Qiang Li; Zhi Wang; Yansi Le; Chonghui Sun; Xiaojia Song; Chongqing Wu
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Paper Abstract

Neuromorphic engineering has a wide range of applications in the fields of machine learning, pattern recognition, adaptive control, etc. Photonics, characterized by its high speed, wide bandwidth, low power consumption and massive parallelism, is an ideal way to realize ultrafast spiking neural networks (SNNs). Synaptic plasticity is believed to be critical for learning, memory and development in neural circuits. Experimental results have shown that changes of synapse are highly dependent on the relative timing of pre- and postsynaptic spikes. Synaptic plasticity in which presynaptic spikes preceding postsynaptic spikes results in strengthening, while the opposite timing results in weakening is called antisymmetric spike-timing-dependent plasticity (STDP) learning rule. And synaptic plasticity has the opposite effect under the same conditions is called antisymmetric anti-STDP learning rule. We proposed and experimentally demonstrated an optical implementation of neural learning algorithms, which can achieve both of antisymmetric STDP and anti-STDP learning rule, based on the cross-gain modulation (XGM) within a single semiconductor optical amplifier (SOA). The weight and height of the potentitation and depression window can be controlled by adjusting the injection current of the SOA, to mimic the biological antisymmetric STDP and anti-STDP learning rule more realistically. As the injection current increases, the width of depression and potentitation window decreases and height increases, due to the decreasing of recovery time and increasing of gain under a stronger injection current. Based on the demonstrated optical STDP circuit, ultrafast learning in optical SNNs can be realized.

Paper Details

Date Published: 31 October 2016
PDF: 6 pages
Proc. SPIE 10019, Optoelectronic Devices and Integration VI, 100190E (31 October 2016); doi: 10.1117/12.2245976
Show Author Affiliations
Qiang Li, Beijing Jiaotong Univ. (China)
Key Lab. of Luminescence and Optical Information (China)
Zhi Wang, Beijing Jiaotong Univ. (China)
Key Lab. of Luminescence and Optical Information (China)
Yansi Le, Beijing Jiaotong Univ. (China)
Key Lab. of Luminescence and Optical Information (China)
Chonghui Sun, Beijing Jiaotong Univ. (China)
Key Lab. of Luminescence and Optical Information (China)
Xiaojia Song, Beijing Jiaotong Univ. (China)
Key Lab. of Luminescence and Optical Information (China)
Chongqing Wu, Beijing Jiaotong Univ. (China)
Key Lab. of Luminescence and Optical Information (China)


Published in SPIE Proceedings Vol. 10019:
Optoelectronic Devices and Integration VI
Xuping Zhang; Baojun Li; Changyuan Yu, Editor(s)

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