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Proceedings Paper

Quantum device prospects of superconducting nanodiamond films
Author(s): D. Mtsuko; D. Churochkin; S. Bhattacharyya
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Paper Abstract

Nanostructured semiconducting carbon system, described by as a superlattice-like structure demonstrated its potential in switching device applications based on the quantum tunneling through the insulating carbon layer. This switching property can be enhanced further with the association of Josephson’s tunneling between two superconducting carbon (diamond) grains separated by a very thin layer of carbon which holds the structure of the film firmly. The superconducting nanodiamond heterostructures form qubits which can lead to the development of quantum computers provided the effect of disorder present in these structure can be firmly understood. Presently we concentrate on electrical transport properties of heavily boron–doped nanocrystalline diamond films around the superconducting transition temperature measured as a function of magnetic fields and the applied bias current. Microstructure of these films is described by a two dimensional superlattice system which can also contain paramagnetic impurities. We report observation of anomalous negative Hall resistance in these films close to the superconductor-insulator-normal phase transition in the resistance versus temperature plots at low bias currents at zero and low magnetic field. The negative Hall effect is found to be suppressed as the bias current increase. Magnetoresistance study shows a distinct peak at zero field when measured in the low current regimes which suggest a superconductor-insulator-superconductor structure of films. Current vs. voltage characteristics show signature of π-Josephson like behaviour which can give rise to a characteristic frequency of several hundred of gigahertz. Signature of spin flipping also shows novel spintronic device applications.

Paper Details

Date Published: 3 February 2017
PDF: 9 pages
Proc. SPIE 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems, 1003606 (3 February 2017); doi: 10.1117/12.2245593
Show Author Affiliations
D. Mtsuko, Univ. of the Witwatersrand (South Africa)
D. Churochkin, Univ. of the Witwatersrand (South Africa)
S. Bhattacharyya, Univ. of the Witwatersrand (South Africa)


Published in SPIE Proceedings Vol. 10036:
Fourth Conference on Sensors, MEMS, and Electro-Optic Systems
Monuko du Plessis, Editor(s)

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