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Proceedings Paper

Silicon photonics process development based on a 200-mm CMOS platform
Author(s): Zhihua Li; Jiang Yan; Bo Tang; Guilei Wang; Lingkuan Meng; Daoqun Liu
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Paper Abstract

In this paper, the process difference between Si photonics and Si CMOS is discussed. Firstly, the substrate of Si photonics and the issues about electronic-photonic integration are commented . Lithography, etching and hydrogen annealing are then discussed in detail. Line edge roughness is thought to be the original source of scattering loss of waveguide. Hydrogen annealing is effective to reduce the sidewall roughness but has the risky of changing the profile of waveguide. Ion implantation and metallization for active photonics components can be easily transferred from the CMOS process recipes. Ge photodetector fabrication is challenging though it shares the same epitaxy equipment with the CMOS platform. Finally, a whole Si photonics process flow including passive and active components based on our 200 mm CMOS platform is presented.

Paper Details

Date Published: 4 November 2016
PDF: 8 pages
Proc. SPIE 10027, Nanophotonics and Micro/Nano Optics III, 1002706 (4 November 2016); doi: 10.1117/12.2245513
Show Author Affiliations
Zhihua Li, Institute of Microelectronics (China)
Jiang Yan, Institute of Microelectronics (China)
Bo Tang, Institute of Microelectronics (China)
Guilei Wang, Institute of Microelectronics (China)
Lingkuan Meng, Institute of Microelectronics (China)
Daoqun Liu, Institute of Microelectronics (China)

Published in SPIE Proceedings Vol. 10027:
Nanophotonics and Micro/Nano Optics III
Zhiping Zhou; Kazumi Wada, Editor(s)

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