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Proceedings Paper

Bismuth incorporation into gallium phosphide
Author(s): Theresa M. Christian; Daniel A. Beaton; Angelo Mascarenhas; Kirstin Alberi
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Paper Abstract

Gallium phosphide bismide (GaP1-xBix) epilayers with bismuth fractions from 0.9% to 3.2%, as calculated from lattice parameter measurements, were studied with Rutherford backscattering spectrometry (RBS) to directly measure bismuth incorporation. The total bismuth fractions found by RBS were higher than expected from the lattice parameter calculations. Furthermore, in one analyzed sample grown by molecular beam epitaxy at 300 °C, 55% of incorporated bismuth was found to occupy interstitial sites. We discuss implications of this high interstitial incorporation fraction and its possible relationship to x-ray diffraction and photoluminescence measurements of GaP0.99Bi0.01.

Paper Details

Date Published: 21 December 2016
PDF: 7 pages
Proc. SPIE 10174, International Symposium on Clusters and Nanomaterials, 101740F (21 December 2016); doi: 10.1117/12.2245432
Show Author Affiliations
Theresa M. Christian, National Renewable Energy Lab. (United States)
Univ. of Colorado (United States)
Daniel A. Beaton, National Renewable Energy Lab. (United States)
Angelo Mascarenhas, National Renewable Energy Lab. (United States)
Kirstin Alberi, National Renewable Energy Lab. (United States)


Published in SPIE Proceedings Vol. 10174:
International Symposium on Clusters and Nanomaterials
Puru Jena; Anil K. Kandalam, Editor(s)

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