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Proceedings Paper

Investigation and modeling of CPL mask profiles using OCD
Author(s): Hsuan-Chen Chen; Ren-Hao Lin; Chien-Cheng Chen; Cheng-Hsuan Huang; Ta-Cheng Lien; Chia-Jen Chen; Gaston Lee; Hsin-Chang Lee; Anthony Yen
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Paper Abstract

Mask profile of chromeless phase-shifting lithography (CPL) defined by OCD has been investigated. In CPL masks, unbalanced bombardments caused by different ion accelerations lead to the formation of micro-notch structures. A better understanding of micro-notch structures is essential for quality gating of mask processes to improve of CPL mask profiles. By measuring 12 of 16 elements of Mueller matrix, we are able to set up a model to simulate the depth of micro-notch structure profile which shows good correlation with TEM images. Moreover, values of CD, quartz etching depth and side wall angle acquired by OCD are presented and compared with those obtained by SEM, TEM and AFM, respectively.

Paper Details

Date Published: 10 May 2016
PDF: 5 pages
Proc. SPIE 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 998408 (10 May 2016); doi: 10.1117/12.2245332
Show Author Affiliations
Hsuan-Chen Chen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Ren-Hao Lin, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Chien-Cheng Chen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Cheng-Hsuan Huang, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Ta-Cheng Lien, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Chia-Jen Chen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Gaston Lee, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Hsin-Chang Lee, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Anthony Yen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 9984:
Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology
Nobuyuki Yoshioka, Editor(s)

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