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Proceedings Paper

Simulation of phase-change random access memory with 35nm diameter of the TiN bottom electrode by finite element modeling
Author(s): Qiuxue Jin; Bo Liu; Yan Liu; Heng Wang; Zhen Xu; Dan Gao; Qing Wang; Yangyang Xia; Weiwei Wang; Zhitang Song; Songlin Feng
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Paper Abstract

A three-dimensional finite element model for Phase-Change Random Access Memory (PCRAM) is established to simulate thermal and electrical distribution during RESET operation. The establishment of the model is highly in accordance with the manufacture of PCRAM cell in the 40nm process and the model is applied to simulate the RESET behaviors of 35 nm diameter of titanium nitride (TiN) bottom electrode in the conventional mushroom structure (MS). By the simulations of thermal and electrical distribution, the highest temperature is observed in TiN bottom electrode contactor and meanwhile the voltage of the TiN bottom electrode accounts for as high as 65 percent of the total voltage. It induces high RESET current which suggests that the thermoelectric conductivity of MS is crucial in improving the heating efficiency in RESET process. Simulation results of RESET current and high resistance distribution during RESET operation are close to the data from the actual measurement. However those two values of low resistance are slightly different, probably due to the interface resistance between Ge2Sb2Te5 (GST) and other materials and the resistance caused by microstructural defects. This work reveals the importance of the thermoelectrical properties of materials in PCRAM cells and improves the quality of PCRAM simulations in industrial application.

Paper Details

Date Published: 12 October 2016
PDF: 5 pages
Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180K (12 October 2016); doi: 10.1117/12.2245269
Show Author Affiliations
Qiuxue Jin, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Science (China)
Bo Liu, Shanghai Institute of Microsystem and Information Technology (China)
Yan Liu, Shanghai Institute of Microsystem and Information Technology (China)
Heng Wang, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Science (China)
Zhen Xu, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Science (China)
Dan Gao, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Science (China)
Qing Wang, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Science (China)
Yangyang Xia, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Science (China)
Weiwei Wang, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Science (China)
Zhitang Song, Shanghai Institute of Microsystem and Information Technology (China)
Songlin Feng, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 9818:
2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song; Yang Wang, Editor(s)

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