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Proceedings Paper

Probing the dynamics of the interaction between few-cycle laser pulses and single crystal (100) Si and GaAs near the laser-induced damage threshold
Author(s): Noah Talisa; Kevin Werner; Kyle Kafka; Drake R. Austin; Enam Chowdhury
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Paper Abstract

The dynamics of the laser-solid interaction with high intensity ultra-short s-polarized few-cycle pulses (FCPs) (Ephoton ~ 1.65 eV) and single crystals (100) Si and GaAs (Egap ~ 1.14 and 1.4 eV, respectivly) near the multipulse laser-induced damage threshold (LIDT) were measured using a pump-probe reflectivity technique. FCP’s with central wavelength 760 nm and FWHM duration 5 fs used as both pump and probe pulses were incident at 45°, and the reflectivity of each probe pulse was measured as the delay between the pump and probe pulses was varied with ~ 0.1 fs resolution. Near zero delay, the probe pulse reflectivity displayed oscillatory behavior relative to the unexcited reflectivity for both materials, with a period equal to the optical cycle (~2.6 fs). For Si, the crystal orientation was varied so that the field polarization was parallel to the (010) and (011) directions, and half way in between. Significantly larger zero delay oscillations were observed for the field polarization parallel to the (011) direction compared to those for the other two directions.

Paper Details

Date Published: 6 December 2016
PDF: 6 pages
Proc. SPIE 10014, Laser-Induced Damage in Optical Materials 2016, 100141U (6 December 2016); doi: 10.1117/12.2245175
Show Author Affiliations
Noah Talisa, The Ohio State Univ. (United States)
Kevin Werner, The Ohio State Univ. (United States)
Kyle Kafka, The Ohio State Univ. (United States)
Drake R. Austin, The Ohio State Univ. (United States)
Enam Chowdhury, The Ohio State Univ. (United States)

Published in SPIE Proceedings Vol. 10014:
Laser-Induced Damage in Optical Materials 2016
Greg J. Exarhos; Vitaly E. Gruzdev; Joseph A. Menapace; Detlev Ristau; MJ Soileau, Editor(s)

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