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Proceedings Paper

Development of three-dimensional memory (3D-M)
Author(s): Hong-Yu Yu; Chen Shen; Lingli Jiang; Bin Dong; Guobiao Zhang
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Paper Abstract

Since the invention of 3-D ROM in 1996, three-dimensional memory (3D-M) has been under development for nearly two decades. In this presentation, we'll review the 3D-M history and compare different 3D-Ms (including 3D-OTP from Matrix Semiconductor, 3D-NAND from Samsung and 3D-XPoint from Intel/Micron).

Paper Details

Date Published: 12 October 2016
PDF: 5 pages
Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 981805 (12 October 2016); doi: 10.1117/12.2245145
Show Author Affiliations
Hong-Yu Yu, Southern Univ. of Science and Technology of China (China)
Chen Shen, Suzhou Cogenda Co. (China)
Lingli Jiang, Southern Univ. of Science and Technology of China (China)
Bin Dong, Southern Univ. of Science and Technology of China (China)
Guobiao Zhang, Southern Univ. of Science and Technology of China (China)
Chengdu Haicun IP Technology LLC (China)


Published in SPIE Proceedings Vol. 9818:
2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song; Yang Wang, Editor(s)

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