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Proceedings Paper

Influence of silicon oxide on the performance of TiN bottom electrode in phase change memory
Author(s): Dan Gao; Bo Liu; Zhen Xu; Heng Wang; Yangyang Xia; Lei Wang; Nanfei Zhu; Ying Li; Yipeng Zhan; Zhitang Song; Songlin Feng
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Paper Abstract

The stability of TiN which is the preferred bottom electrode contact (BEC) of phase change memory (PCM) due to its low thermal conductivity and suitable electrical conductivity, is very essential to the reliability of PCM devices. In this work, in order to investigate the effect of high aspect ratio process (HARP) SiO2 on the performance of TiN, both TiN/SiO2, TiN/SiN thin films and TiN BEC device structures are analyzed. By combining transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS), we found that the TiN would be oxidized after the deposition of HARP SiO2 and there exist a thin (~4 nm) oxidation interfacial layer between TiN and SiO2. Electrical measurements were performed on the 1R PCM test-key die with 7 nm and 10 nm BEC-only cells. The statistical initial resistances of BEC have wide distribution and it is confirmed that the non-uniform oxidation of TiN BEC affects the astringency of the resistance of TiN BEC. The experimental results help to optimize the process of TiN BEC, and SiN is recommended as a better choice as the linear layer.

Paper Details

Date Published: 12 October 2016
PDF: 7 pages
Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180I (12 October 2016); doi: 10.1117/12.2245062
Show Author Affiliations
Dan Gao, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Sciences (China)
Bo Liu, Shanghai Institute of Microsystem and Information Technology (China)
Zhen Xu, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Sciences (China)
Heng Wang, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Sciences (China)
Yangyang Xia, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Sciences (China)
Lei Wang, Semiconductor Manufacturing International Corp. (China)
Nanfei Zhu, Semiconductor Manufacturing International Corp. (China)
Ying Li, Semiconductor Manufacturing International Corp. (China)
Yipeng Zhan, Semiconductor Manufacturing International Corp. (China)
Zhitang Song, Shanghai Institute of Microsystem and Information Technology (China)
Songlin Feng, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 9818:
2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song; Yang Wang, Editor(s)

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