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Proceedings Paper

Electrical properties of Cr-doped Sb2Te3 phase change material
Author(s): Qing Wang; Bo Liu; Yangyang Xia; Yonghui Zheng; Sannian Song; Yan Cheng; Zhitang Song; Songlin Feng
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Paper Abstract

Phase Change Memory (PCM) is regarded as one of the most promising candidates for the next-generation nonvolatile memory. Its storage medium, phase change material, has attracted continuous exploration. Sb2Te3 is a high-speed phase change material matrix with low crystallization temperature. Cr-doped Sb2Te3 (CST) films with suitable composition have been studied and proved to be a promising novel phase change material with high speed and good thermal stability. In this paper, detailed Rs-T characteristics and Hall characteristics of the CST films are studied. We find that, when more parts of the film crystallizes into the ordered structure, the activation energy for electrical conduction (Eσ) decreases, indicating that the semiconductor property is weakened. And with the increase of Cr-dopants, Eσ of the As-deposited (As-de) amorphous CST films decreases, thus the thermal stability of resistance is improved. Hall results show that Sb2Te3 and CST films are all in P-type. For As-de amorphous films, with the increase of Cr-dopants, the carrier mobility decreases all along, while the carrier density decreases at first and then increases. For the crystalline films, with the increase of Cr-dopants, the carrier mobility decreases, while the carrier density increases.

Paper Details

Date Published: 12 October 2016
PDF: 6 pages
Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180H (12 October 2016); doi: 10.1117/12.2245039
Show Author Affiliations
Qing Wang, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Sciences (China)
Bo Liu, Shanghai Institute of Microsystem and Information Technology (China)
Yangyang Xia, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Sciences (China)
Yonghui Zheng, Shanghai Institute of Microsystem and Information Technology (China)
Univ. of Chinese Academy of Sciences (China)
Sannian Song, Shanghai Institute of Microsystem and Information Technology (China)
Yan Cheng, Shanghai Institute of Microsystem and Information Technology (China)
Zhitang Song, Shanghai Institute of Microsystem and Information Technology (China)
Songlin Feng, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 9818:
2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song; Yang Wang, Editor(s)

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