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Proceedings Paper

Waveguide effect of Fe doped GaN alloy grown by MOCVD
Author(s): Xiangming Gao; Wenqi Zheng; Tao Fan; Yuyang Zhang; Jinshe Yuan
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Paper Abstract

The surface morphology and structural properties of Fe doped GaN alloy samples were analyzed by SPM9700 atomic force microscope and X LabXRD-6100 ray diffraction. The equivalent diameter of crystallite size was calculated to be 18nm according to the XRD data. The photoluminescence spectra of the samples were measured by 325nm continuous laser excitation at room temperature. The peaks position of the photoluminescence spectra of the samples was located at 450nm, 585nm and 665nm respectively. The waveguide effect was observed and analyzed. The peak wavelength of the waveguide is mainly in the 543nm. The results suggested significantly for further improvement of the performance of GaN based electronic devices and optoelectronic devices.

Paper Details

Date Published: 25 October 2016
PDF: 6 pages
Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 96860B (25 October 2016); doi: 10.1117/12.2245019
Show Author Affiliations
Xiangming Gao, Chongqing Normal Univ. (China)
Chongqing Key Lab. of Photoelectric Function Materials (China)
Wenqi Zheng, Chongqing Normal Univ. (China)
Chongqing Key Lab. of Photoelectric Function Materials (China)
Tao Fan, Chongqing Normal Univ. (China)
Chongqing Key Lab. of Photoelectric Function Materials (China)
Yuyang Zhang, Chongqing Normal Univ. (China)
Chongqing Key Lab. of Photoelectric Function Materials (China)
Jinshe Yuan, Chongqing Normal Univ. (China)
Chongqing Key Lab. of Photoelectric Function Materials (China)


Published in SPIE Proceedings Vol. 9686:
8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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