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Proceedings Paper

Study on the preparation of resist mask based on two-consecutive electron beam exposure
Author(s): Yanbing Leng; Li Wang; Yanjun Sun; Lianhe Dong
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Paper Abstract

To overcome the alignment error caused by the overlay when the conventional electron beam lithography produces the four-step relief structure, the paper did a detailed research on the influence of different accelerating voltage on the exposure depth during the process of exposure. Therefore, it drew out the limit value of exposure depth under different accelerating voltage and the relationship between the electron beam energy and critical exposed dose. Through the analysis of the experimental results, it worked out the optimum process parameter combination of exposure. The accelerating voltage of the first exposure was 5keV and the exposed dose was 100μC/cm2, while the second accelerating voltage was 15keV and the exposed dose was 150μC/cm2. Finally, the four-step relief structure was made on the resist layer and this structure met the needs of the graphic transfer process on the etch mask.

Paper Details

Date Published: 19 October 2016
PDF: 9 pages
Proc. SPIE 10154, Advanced Optical Design and Manufacturing Technology and Astronomical Telescopes and Instrumentation, 101540D (19 October 2016); doi: 10.1117/12.2244943
Show Author Affiliations
Yanbing Leng, Changchun Univ. of Science and Technology (China)
Li Wang, Changchun Univ. of Science and Technology (China)
Yanjun Sun, Changchun Univ. of Science and Technology (China)
Lianhe Dong, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 10154:
Advanced Optical Design and Manufacturing Technology and Astronomical Telescopes and Instrumentation
Min Xu; Ji Yang, Editor(s)

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