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Proceedings Paper

PSPICE simulation of transient characteristics of GaN based MSM structure UV detector grown by MBE
Author(s): Xiangming Gao; Shuo Wang; Hongxia Ran; Ruifeng Liu; Jinshe Yuan
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Paper Abstract

On the basis of optimizing the process conditions of molecular beam epitaxy (MBE), the GaN thin film with high quality was prepared by using sapphire (0001) vicinal substrate. HP-5000 type transistor characteristic tester was employed to measure the dark state current-voltage (I-V) characteristics of the GaN thin film metal–semiconductor–metal (MSM) structure grown on adjacent crystal surface by MBE. It was found that this kind of MSM structures had shown a rectifying contact characteristic. The dynamic photoconductive characteristics of the GaN based MSM structure and the transient photocurrent characteristics of the reverse bias diode were simulated by using PSPICE. The results showed that the transient photocurrent response time was in nanosecond level, under the condition of pulse width 800ps, wavelength 355nm light excitation.

Paper Details

Date Published: 25 October 2016
PDF: 6 pages
Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 96860A (25 October 2016); doi: 10.1117/12.2244817
Show Author Affiliations
Xiangming Gao, Chongqing Normal Univ. (China)
Chongqing Key Lab. of Photoelectric Function Materials (China)
Shuo Wang, Chongqing Normal Univ. (China)
Chongqing Key Lab. of Photoelectric Function Materials (China)
Hongxia Ran, Chongqing Normal Univ. (China)
Chongqing Key Lab. of Photoelectric Function Materials (China)
Ruifeng Liu, Chongqing Normal Univ. (China)
Chongqing Key Lab. of Photoelectric Function Materials (China)
Jinshe Yuan, Chongqing Normal Univ. (China)
Chongqing Key Lab. of Photoelectric Function Materials (China)


Published in SPIE Proceedings Vol. 9686:
8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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