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Proceedings Paper

Infrared responsivity enhancement for silicon detectors by non-mask reactive ion etching
Author(s): Naiman Liao; Linlai Kou; Chunlin Luo; Renhao Li
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Paper Abstract

Near Infrared responsivity of silicon-based detectors is low for weak light absorption in the wavelengths exceeding 1000nm. For 1064nm wavelength applications, it is necessary to use thick Si wafers to manufacturing devices for higher NIR responsivity performance. However, this leads to high applied voltage, long response time, imposing limitations on device characteristics and applications. Black silicon (BS) appears very high absorptance of light from the near-ultraviolet (250nm) to the near-infrared (2500nm) wavelength region. And the black silicon detectors are many times more responsivity than conventional silicon detectors in the near infrared.

In this article, BS is prepared using non-mask reactive ion etching technique and PIN BS detectors are fabricated. It is indicated that there is a disordered layer that is 2.0μm -3.5μm thick and made up of pillars with 90nm-400nm in diameter and 200nm-600nm in spacing interval. The reflectance of BS is less than 7% in the wavelength from 400nm to 1100nm, and rises from 1040nm. The absorptance of BS sample prepared by non-mask reactive ion etching remains more than 93% from 400nm to 1040nm, and the absorptance of 60% is observed at the wavelengths longer than 1500nm. High temperature annealing does not deteriorate its light absorption performance. The front-illuminated and back-illuminated BS PIN detectors are structured. At the wavelength of 1064nm, the responsivities of front-illuminated and back-illuminated BS PIN detectors are improved from 0.30A/W to 0.43A/W and 0.58A/W respectively.

Paper Details

Date Published: 25 October 2016
PDF: 7 pages
Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 1015708 (25 October 2016); doi: 10.1117/12.2244129
Show Author Affiliations
Naiman Liao, Chongqing Optoelectronics Research Institute (China)
Linlai Kou, Chongqing Optoelectronics Research Institute (China)
Chunlin Luo, Chongqing Optoelectronics Research Institute (China)
Renhao Li, Chongqing Optoelectronics Research Institute (China)


Published in SPIE Proceedings Vol. 10157:
Infrared Technology and Applications, and Robot Sensing and Advanced Control

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