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Proceedings Paper

A room temperature terahertz photodetector based on In0.53Ga0.47As material
Author(s): Yue Qu; Wei Zhou; Niangjuan Yao; Zhiming Huang
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Paper Abstract

A terahertz photodetector was designed based on the novel room-temperature photoconductivity theory we proposed before. Prototype detectors with different sizes of photo-active area was fabricated on In0.53Ga0.47As material. Detectors' I-V property were tested, and signal response to a 0.0375THz source were measured. Results indicated that our detectors performed outstanding responsivity and respond speed. The room-temperature responsivity was estimated to be on the order of 104 V/W, the corresponding noise equivalent power (NEP) was estimated to be on the order of 10-12 W/Hz1/2, and the response time constant was calculated to be 1.06×10-5 S. Finally, our room-temperature photoconductivity theory was confirmed to be detectors’ respond mechanism via experiment and estimation.

Paper Details

Date Published: 25 October 2016
PDF: 9 pages
Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 96860S (25 October 2016); doi: 10.1117/12.2243863
Show Author Affiliations
Yue Qu, Shanghai Institute of Technical Physics (China)
Wei Zhou, Shanghai Institute of Technical Physics (China)
Niangjuan Yao, Shanghai Institute of Technical Physics (China)
Zhiming Huang, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9686:
8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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