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Proceedings Paper

Transfer printing of thin-film microscale GaAs lasers on silicon
Author(s): Xing Sheng
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Paper Abstract

We exploit microscale, thin-film gallium arsenide (GaAs) lasers integrated onto silicon (Si) substrates via transfer printing, with a thermally conductive interface material for continuous wave (CW) operation at room temperature. Concepts that bypass existing challenges for III-V/Si integration are presented, and we demonstrate them in strategies for releasing and transfer printing fully formed, functional thin-film microscale GaAs based lasers onto Si substrates where a metallic thin film serves as an adhesive and a thermally conductive interface. Numerical simulations reveal the key considerations in thermal management, with an emphasis on the role of this interface layer. Electrically pumped devices printed on Si exhibit continuous-wave (CW) lasing in the near-infrared range (around 820 nm) at room temperature, with performance comparable to unreleased devices on their native substrates. The spectral shift is consistent with thermal modeling. In addition, preliminary experiments show that the laser devices are possible to be integrated with Si waveguide arrays as well as flexible substrates. The results presented here have promise as generalized routes for advanced heterogeneous integration in next-generation electronic and photonic circuits.

Paper Details

Date Published: 19 October 2016
PDF: 5 pages
Proc. SPIE 10152, High Power Lasers, High Energy Lasers, and Silicon-based Photonic Integration, 1015201 (19 October 2016); doi: 10.1117/12.2243454
Show Author Affiliations
Xing Sheng, Tsinghua Univ. (China)


Published in SPIE Proceedings Vol. 10152:
High Power Lasers, High Energy Lasers, and Silicon-based Photonic Integration
Lijun Wang; Zhiping Zhou, Editor(s)

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