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Proceedings Paper

Absorption and emission spectra of Ga1.7Ge25As8.3S65 glasses doped with rare-earth ions
Author(s): E. V. Lupan; O. V. Iaseniuc; V. I. Ciornea; M. S. Iovu
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Paper Abstract

Excellent optical properties of chalcogenide glasses make them interesting for optoelectronic devices in the visible (VIS) and, especially, in the near- and mid-infrared (NIR and MIR) spectral regions. The rare-earth (RE3+) doped Ga17Ge25As8.3S65 glasses were prepared in evacuated (~10−5 Pa) silica-glass ampoules which were heated up to 1000 °C at 2–4°C min-1, and then the melt was quenched. The absorption and photoluminescence spectra in the visible and near IR regions for GA1.7Ge25As8.3S65 doped with rare-earth RE+) ions (Sm3+, Nd3+, Pr3+, Dy3+ and co-doped with Ho3++Dy3+) are investigated. The energy transfer of the absorbed light in the broad band Urbach region of the host glass to the RE3+ ions is suggested for increasing the emission efficiency. The investigated Ga17Ge25As8.3S65 glasses doped with RE3+ ions are promising materials for optical amplifiers operating at 1300 and 1500 nm telecommunication windows.

Paper Details

Date Published: 14 December 2016
PDF: 5 pages
Proc. SPIE 10010, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII, 100100P (14 December 2016); doi: 10.1117/12.2243163
Show Author Affiliations
E. V. Lupan, Institute of Applied Physics (Moldova)
O. V. Iaseniuc, Institute of Applied Physics (Moldova)
V. I. Ciornea, Institute of Applied Physics (Moldova)
M. S. Iovu, Institute of Applied Physics (Moldova)


Published in SPIE Proceedings Vol. 10010:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII
Marian Vladescu; Cornel T. Panait; Razvan Tamas; George Caruntu; Ionica Cristea, Editor(s)

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