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Proceedings Paper

Influence of the coordination number Z on the micro-Raman spectra of ternary chalcogenide glasses
Author(s): M. S. Iovu; O. V. Iaseniuc; D. Dinescu; M. Enachescu
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Paper Abstract

Chalcogenide glasses are attractive materials due to its application in photonics and optoelectronics. Chalcogenide glasses GexAsxSe1-2x (average coordination number Z=2.15÷2.90) and (As4S3Se3)1-xSnx (average coordination number Z=2.4÷2.56), which contain elements of IV group of the Periodic Table, such as Ge and Sn are important for a wide range of technical applications, such as infrared optical elements, acousto-optic and alloptical switching devices, holographic recording media, diffractive optics, photonic crystals, etc. [1, 2]. Raman spectroscopy is an efficient method for obtaining information on the local structure of the disordered material, especially when the composition is varied. In this paper are reported the Micro-Raman spectra of GexAsxSe1-2x and (As4S3Se3)1-xSnx bulk glasses and amorphous thin films. The Micro-Raman spectra of bulk glasses and thermally deposited amorphous (As4S3Se3)1-xSnx thin films consist of two broad bands located at around ν=236 cm-1 and ν=345 cm-1, which corresponds to the symmetric stretching vibration modes of AsSe3/2 and AsS3/2 pyramids, respectively. Tin impurities didn’t change the shape of Micro-Raman spectra, but shift the both bands to low frequency region. The Micro-Raman spectra of bulk glasses and thermally deposited amorphous (GexAsxSe1-2x thin films consist of one main vibration band located at around ν=246 cm-1 for lower concentration of Ge and As, and is attributed to (AsSe1/2)3 pyramidal units. With increasing of Ge and As concentrations this band shifts to lower frequency region up to ν=236 cm-1 for x=0.30. The vibration band situated around ν=205 cm-1 is attributed to Ge(Se1/2)4 tetrahedral units and increase in the intensity with increasing of Ge and As concentrations. Some shoulders in high frequency regions at ν=365-390 cm-1 and ν=500-530 cm-1, caused by the presence of As-Se bands and Se-Se chains also was observed.

Paper Details

Date Published: 14 December 2016
PDF: 8 pages
Proc. SPIE 10010, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII, 100100O (14 December 2016); doi: 10.1117/12.2243147
Show Author Affiliations
M. S. Iovu, Institute of Applied Physics (Moldova)
O. V. Iaseniuc, Institute of Applied Physics (Moldova)
D. Dinescu, Ctr. for Surface Science and Nanotechnology (Romania)
M. Enachescu, Ctr. for Surface Science and Nanotechnology (Romania)


Published in SPIE Proceedings Vol. 10010:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII
Marian Vladescu; Cornel T. Panait; Razvan Tamas; George Caruntu; Ionica Cristea, Editor(s)

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