Share Email Print
cover

Proceedings Paper

Complementary field-effect transistors for flexible electronics
Author(s): Ulrich Hilleringmann; Fábio F. Vidor; Thorsten Meyers
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Key issues for flexible complementary electronics are low temperature processing, sufficient performance of the integrated p- and n-type FET devices, and cheap semiconducting and dielectric materials. Organic semiconductors commonly depict p-type behavior, whereas metal oxide semiconductors show n-type characteristics. This paper presents a new approach for common integration of organic and ZnO transistors on transparent substrates for complementary transistor electronics. The gate dielectric consists of a special high-k resin, the metallization utilizes Au and Al films. The thermal budget for processing of the devices is limited to 120°C to enable foil substrates.

Paper Details

Date Published: 3 February 2017
PDF: 6 pages
Proc. SPIE 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems, 100360K (3 February 2017); doi: 10.1117/12.2243001
Show Author Affiliations
Ulrich Hilleringmann, Univ. Paderborn (Germany)
Fábio F. Vidor, Univ. Paderborn (Germany)
Thorsten Meyers, Univ. Paderborn (Germany)


Published in SPIE Proceedings Vol. 10036:
Fourth Conference on Sensors, MEMS, and Electro-Optic Systems
Monuko du Plessis, Editor(s)

© SPIE. Terms of Use
Back to Top