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Proceedings Paper

Spatial distribution of current density and thermal resistance of high-power AlInGaN vertical and face-up light-emitting diodes
Author(s): A. V. Aladov; V. D. Kuptsov; A. E. Chernyakov; A. L. Zakgeim; V. P. Valyukhov
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Paper Abstract

This paper presents a comprehensive analysis of the electroluminescence (EL) and current distributions in connection with heat transfer (thermal resistance) in high-power “vertical" and "face-up" AlGaInN light emitting diodes (LEDs). The study was carried out using a combination of high-resolution EL mapping techniques giving information on the lateral distributions of near-field light emission intensity and thermal transient measurements for evaluation of thermal resistance of LEDs and its elements. It was shown that poor current spreading at high current density causes increase in thermal resistance.

Paper Details

Date Published: 31 October 2016
PDF: 6 pages
Proc. SPIE 10021, Optical Design and Testing VII, 100210X (31 October 2016); doi: 10.1117/12.2242939
Show Author Affiliations
A. V. Aladov, Submicron Heterostructures for Microelectronics, Research and Engineering Ctr. (Russian Federation)
V. D. Kuptsov, Saint-Petersburg State Polytechnical Univ. (Russian Federation)
A. E. Chernyakov, Submicron Heterostructures for Microelectronics, Research and Engineering Ctr. (Russian Federation)
A. L. Zakgeim, Submicron Heterostructures for Microelectronics, Research and Engineering Ctr. (Russian Federation)
V. P. Valyukhov, Saint-Petersburg State Polytechnical Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 10021:
Optical Design and Testing VII
Yongtian Wang; Tina E. Kidger; Kimio Tatsuno, Editor(s)

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