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Proceedings Paper

Mid-infrared detection in p-GaAs/AlGaAs heterostructures with a current blocking barrier
Author(s): Dilip Chauhan; A. G. Unil Perera; Lianhe Li; Li Chen; Edmund H. Linfield
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Paper Abstract

For the infrared detection in the 3-5 μm range, p-GaAs/AlxGa1-xAs heterojunction is an attractive material system due to light hole/heavy hole and spin-orbit split-off intra-valance band transitions in this wavelength range. Varying the Al mole fraction (x) provides the tuning for the wavelength threshold, while graded AlxGa1-xAs potential barriers create an asymmetry to allow a photovoltaic operation. The photovoltaic mode of operation offers the advantage of thermal noise limited performance. In our preliminary work, a 2 – 6 μm photovoltaic detector was studied. Implementation of an additional current blocking barrier improved the specific detectivity (D*) by two orders of magnitude, to 1.9×1011 Jones at 2.7 μm, at 77K. At zero bias, the resistance-area product (R0A) had a value of ~ 7.2×108 Ω cm2, which is five orders higher in magnitude (with a corresponding reduction of the responsivity by only a factor of ~ 1.5), compared to the R0A value without the blocking barrier. A photoresponse was observed up to 130K.

Paper Details

Date Published: 3 February 2017
PDF: 7 pages
Proc. SPIE 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems, 1003615 (3 February 2017); doi: 10.1117/12.2242898
Show Author Affiliations
Dilip Chauhan, Georgia State Univ. (United States)
A. G. Unil Perera, Georgia State Univ. (United States)
Lianhe Li, Univ. of Leeds (United Kingdom)
Li Chen, Univ. of Leeds (United Kingdom)
Edmund H. Linfield, Univ. of Leeds (United Kingdom)


Published in SPIE Proceedings Vol. 10036:
Fourth Conference on Sensors, MEMS, and Electro-Optic Systems
Monuko du Plessis, Editor(s)

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