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Proceedings Paper

THz transmittance and electrical properties of silicon doped vanadium dioxide films tuning by annealing temperature
Author(s): Xuefei Wu; Zhiming Wu; Chunhui Ji; Zehua Huang; Jun Gou; Jun Wang; Yadong Jiang
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Paper Abstract

Silicon doped vanadium dioxide (VO2) films were successfully prepared on high purity Si(111) substrate. Confirmed by X-ray diffraction, all samples showed a preference orientation of (011) direction. Introducing silicon led grain sizes decreasing comparing to undoped VO2 film, and this result induced a narrow hysteresis width in MIT performance. Furthermore, silicon doped VO2 films annealing in different temperature presented different phase transition properties. In the electrical, a higher annealing temperature resulted in a decrease of sheet resistance and lowering the transition temperature. In terahertz optical transmittance, silicon doped VO2 films keep an excellent modulation ratio, indicating a great potential in the application of terahertz modulator devices.

Paper Details

Date Published: 25 October 2016
PDF: 5 pages
Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 968603 (25 October 2016); doi: 10.1117/12.2242776
Show Author Affiliations
Xuefei Wu, Univ. of Electronic Science and Technology of China (China)
Zhiming Wu, Univ. of Electronic Science and Technology of China (China)
Chunhui Ji, Univ. of Electronic Science and Technology of China (China)
Zehua Huang, Univ. of Electronic Science and Technology of China (China)
Jun Gou, Univ. of Electronic Science and Technology of China (China)
Jun Wang, Univ. of Electronic Science and Technology of China (China)
Yadong Jiang, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 9686:
8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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