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Proceedings Paper

Low-voltage organic thin film transistors with solution processed hafnium oxide and polymer dielectrics
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Paper Abstract

Low-voltage pentacene-based organic thin film transistors (OTFTs) are fabricated with solution-process hafnium oxide (HfO2) as gate dielectric layer. The dielectric high-k HfO2 film was deposited from the sol-gel solution prepared by dissolving HfCl4(98%, Sigma-Aldrich) in ethanol at a proper concentration. We have investigated the effects of the insulating layer on device. As a result, the device with only HfO2 gate dielectric exhibited a good performance with a threshold voltage of -0.88 V, a sub-threshold swing of 1.12 V/dec, and a high field-effect mobility of 1×10-3 cm2/Vs. After employing a very thin PMMA film onto HfO2, the performance of the devices with bilayer dielectrics shows a great improvement. The mobility of these OTFTs can be further boost up to 1.2×10-2 cm2/Vs, and the sub-threshold swing reduced to 0.77 V/dec and the drain current on/off ratio increased almost 7 times. The PMMA insulator buffer layer can also effectively reduce gate leakage current. The results demonstrate that an appropriate polymer buffer layer is a favorable way to improve the performance of the OTFTs with good electrical stability.

Paper Details

Date Published: 25 October 2016
PDF: 6 pages
Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 96861Q (25 October 2016); doi: 10.1117/12.2242697
Show Author Affiliations
Biao Xu, Univ. of Electronic Science and Technology of China (China)
Ping Wang, Univ. of Electronic Science and Technology of China (China)
Jian Zhong, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 9686:
8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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