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Proceedings Paper

Influence of annealing treatment on the dielectric properties of poly(vinylidene fluoride)
Author(s): Yuetao Zhao; Wenyao Yang; Yujiu Zhou; Yan Chen; Xin He; Xiling Mao; Yajie Yang; Jianhua Xu; Yadong Jiang
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Paper Abstract

Untreated and annealed PVDF films in same crystalline phase were fabricated via different processes, and the effects of annealing treatment on the dielectric properties of PVDF films were studied. It has been found that the annealing treatment eliminates the micro pores in the PVDF films. As a result, the annealing treatment shows to exert strong influence on the relative permittivity and leakage current of PVDF films. Compared with common untreated PVDF film, the annealed PVDF film presents a higher relative permittivity about 8.7 in a 1 kHz electric field and a lower leakage current around 3.04 μA under a 1000 kV/cm electric field. However, the annealing treatment has little effect on the dissipation factor.

Paper Details

Date Published: 25 October 2016
PDF: 5 pages
Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 96860J (25 October 2016); doi: 10.1117/12.2242632
Show Author Affiliations
Yuetao Zhao, Univ. of Electronic Science and Technology of China (China)
Wenyao Yang, Chongqing Univ. of Arts and Sciences (China)
Yujiu Zhou, Univ. of Electronic Science and Technology of China (China)
Yan Chen, Univ. of Electronic Science and Technology of China (China)
Xin He, Univ. of Electronic Science and Technology of China (China)
Xiling Mao, Univ. of Electronic Science and Technology of China (China)
Yajie Yang, Univ. of Electronic Science and Technology of China (China)
Jianhua Xu, Univ. of Electronic Science and Technology of China (China)
Yadong Jiang, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 9686:
8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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