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Proceedings Paper

Effect of the introduction of Ag on the microstructures and electrical properties of polycrystalline VO2 thin films
Author(s): Deen Gu; Zhou Xin; Zhihui Wang; Pan Tan; Yadong Jiang
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Paper Abstract

We investigate the effect of the introduction of Ag on the microstructures and electrical properties of polycrystalline VO2 thin films prepared by reactively sputtering process. X-ray diffraction patterns and Raman spectra indicate that Ag/VO2 composite thin films have similar monoclinic structure to undoped VO2 films. However, the existence of Ag greatly reduces the grain size of monoclinic VO2. Differently, the data from scanning electron microscopy and atomic force microscopy reveal that the introduction of Ag obviously increases the particle size and root-mean-square(RMS) roughness of VO2 films. The opposite changing tendency between the particle size and grain size probably results from the existing forms of Ag in Ag/VO2 composite thin films. On one hand, the existence of Ag in VO2 lattice and in the grain boundaries inhibits the growth of monoclinic VO2 crystals, thus the grain size decreases. On the other hand, redundant Ag forms pure cubic Ag phase with much larger particle size due to the strong tendency of the Vomer-Webber growth of Ag at elevated temperature. Ag particles in VO2 films cause rougher surface morphologies and larger particle size than undoped VO2 films. The electrical properties Ag/VO2 composite thin films were also investigated. A small amount of Ag depresses the amplitude of semiconductor-metal phase transition (SMPT) of VO2. With the further increase of Ag concentration, the SMPT feature of VO2 thin film gradually disappear. This provides a promising approach for preparing thermal-sensitive vanadium oxide films with high temperature coefficient of resistivity and without SMPT feature for bolometer infrared detectors.

Paper Details

Date Published: 25 October 2016
PDF: 7 pages
Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 96860L (25 October 2016); doi: 10.1117/12.2242620
Show Author Affiliations
Deen Gu, Univ. of Electronic Science and Technology of China (China)
Zhou Xin, Univ. of Electronic Science and Technology of China (China)
Zhihui Wang, Univ. of Electronic Science and Technology of China (China)
Pan Tan, Univ. of Electronic Science and Technology of China (China)
Yadong Jiang, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 9686:
8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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