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Proceedings Paper

Simulation of GaN/InGaN avalanche phototransistors
Author(s): Zhongliang Zhou; Min Zhu; Qi Wu; Shaohui Di; Tong Wang; Jun Chen
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Paper Abstract

Physical simulation of a two-terminal typical avalanche phototransistor with a floating base (2T-APT) based on GaN/InGaN is reported. The simulated current characteristic is also compared with the experiment result. Under high voltages, the carriers multiply in the reverse-biased base-to-collector (BC) junction. To reduce the avalanche breakdown voltage, the doping concentration and the thickness of the base are discussed in detail. It is found that the lower voltage could be achieved by decreasing the doping concentration and the thickness of base. Those results could be explained theoretically by the electric field and the potential barrier in the emitter-to-base (EB) junction and the BC junction.

Paper Details

Date Published: 25 October 2016
PDF: 6 pages
Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 968609 (25 October 2016); doi: 10.1117/12.2242566
Show Author Affiliations
Zhongliang Zhou, Soochow Univ. (China)
Min Zhu, Soochow Univ. (China)
Qi Wu, Soochow Univ. (China)
Shaohui Di, Soochow Univ. (China)
Tong Wang, Soochow Univ. (China)
Jun Chen, Soochow Univ. (China)


Published in SPIE Proceedings Vol. 9686:
8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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