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Proceedings Paper

The effects of Ga incorporation on the crystalline quality of AlInAs metamorphic buffer using x-ray characterization
Author(s): Y. He; Y. Song; Y. R. Sun; S. Z. Yu; Y. M. Zhao; J. R. Dong
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Paper Abstract

The Al(Ga)InAs metamorphic buffers grown by metal organic chemical vapor deposition (MOCVD) on GaAs substrates with miscut angles toward (111)A exhibit anisotropic properties in the two <110> directions. The dislocation distributions of samples were examined using X-ray rocking curve along two orthogonal <110> directions and the measurement results suggested that Ga incorporation can reduce the density of α dislocation. There is an inflection point of substrate miscut above which the type of higher dislocation density switched from α to β types, while Ga incorporation can change the location of the inflection point.

Paper Details

Date Published: 27 September 2016
PDF: 5 pages
Proc. SPIE 9684, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test, Measurement Technology, and Equipment, 96843O (27 September 2016); doi: 10.1117/12.2242556
Show Author Affiliations
Y. He, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
Univ. of Chinese Academy of Sciences (China)
Y. Song, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
Y. R. Sun, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
Univ. of Chinese Academy of Sciences (China)
S. Z. Yu, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
Y. M. Zhao, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
J. R. Dong, Suzhou Institute of Nano-Tech and Nano-Bionics (China)


Published in SPIE Proceedings Vol. 9684:
8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test, Measurement Technology, and Equipment
Yudong Zhang; Fan Wu; Ming Xu; Sandy To, Editor(s)

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