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Proceedings Paper

Comparison of thermal stabilities between Zr9(Ge2Sb2Te5)91 and Ge2Sb2Te5 phase change films
Author(s): Zengguang Li; Yegang Lu; Yadong Ma; Sannian Song; Xiang Shen; Guoxiang Wang; Shixun Dai; Zhitang Song
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Paper Abstract

Phase change memory is regarded as one of the most promising candidates for the next-generation non-volatile memory. Zr9(Ge2Sb2Te5)91 film was investigated as storage material for phase-change memory application. The crystallization temperature (Tc) and 10 years data retention temperature of the Zr9(Ge2Sb2Te5)91 film are about 195 and 106.7°C, respectively, and both higher than that of Ge2Sb2Te5 (GST). The sheet resistance ratio between amorphous and crystalline states is up to four orders of magnitude. The crystalline resistance of Zr9(Ge2Sb2Te5)91 film is higher than GST for one order of magnitude, which contribute to reduce the power consumption for PCM device. Zr9(Ge2Sb2Te5)91 film exhibit larger optical band gap in comparison with GST. Zr9(Ge2Sb2Te5)91 is considered to be a promising material for phase change memory.

Paper Details

Date Published: 12 October 2016
PDF: 6 pages
Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 981808 (12 October 2016); doi: 10.1117/12.2242489
Show Author Affiliations
Zengguang Li, Ningbo Univ. (China)
Key Lab. of Photoelectric Materials and Devices of Zhejiang Province (China)
Yegang Lu, Ningbo Univ. (China)
Key Lab. of Photoelectric Materials and Devices of Zhejiang Province (China)
Yadong Ma, Ningbo Univ. (China)
Key Lab. of Photoelectric Materials and Devices of Zhejiang Province (China)
Sannian Song, Shanghai Institute of Microsystem and Information Technology (China)
Xiang Shen, Key Lab. of Photoelectric Materials and Devices of Zhejiang Province (China)
Ningbo Univ. (China)
Guoxiang Wang, Key Lab. of Photoelectric Materials and Devices of Zhejiang Province (China)
Ningbo Univ. (China)
Shixun Dai, Key Lab. of Photoelectric Materials and Devices of Zhejiang Province (China)
Ningbo Univ. (China)
Zhitang Song, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 9818:
2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage
Fuxi Gan; Zhitang Song; Yang Wang, Editor(s)

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