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Proceedings Paper

High resolution hole patterning with EB lithography for NIL template production
Author(s): Mana Tanabe; Keisuke Yagawa; Takeharu Motokawa; Kazuki Hagihara; Machiko Suenaga; Masato Saito; Shingo Kanamitsu; Masamitsu Itoh
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Paper Abstract

Nano imprint lithography (NIL) is one to one lithography and contact transfer technique using template. Therefore, the lithography performance depends greatly on the quality of the template pattern. In this study, we investigated the resolution and the defect level for hole patterning using chemical amplified resists (CAR) and VSB type EB writer, EBM9000. To form smaller pattern with high quality, high resolution resist process and high sensitivity etching process are needed. After these elements were optimized, we succeeded to form 24 nm dense hole pattern on template. In general, it is difficult to suppress the defect density in a large area because of fogging effect and process loading and so forth. However, from the view point of defect quality, 26 nm hole pattern is achieved to form with practical level in a large area. Therefore, we indicate the capability of forming 26 nm hole master template which will be required in 2019 from ITRS2013. These results show that this process is possible to obtain less than 30 nm hole pattern without enormous writing time. As future work, we will imprint master to replica template and check the printability.

Paper Details

Date Published: 10 May 2016
PDF: 6 pages
Proc. SPIE 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 99840T (10 May 2016); doi: 10.1117/12.2242363
Show Author Affiliations
Mana Tanabe, Toshiba Corp. (Japan)
Keisuke Yagawa, Toshiba Corp. (Japan)
Takeharu Motokawa, Toshiba Corp. (Japan)
Kazuki Hagihara, Toshiba Corp. (Japan)
Machiko Suenaga, Toshiba Corp. (Japan)
Masato Saito, Toshiba Corp. (Japan)
Shingo Kanamitsu, Toshiba Corp. (Japan)
Masamitsu Itoh, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 9984:
Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology
Nobuyuki Yoshioka, Editor(s)

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