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Proceedings Paper

Improvement of the high-frequency performance of field effect transistors via employing a novel high-temperature electronic technique
Author(s): Rajendra Narasimhan; Robert P. Rozario; Laurence P. Sadwick; R. Jennifer Hwu-Sadwick
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Paper Abstract

This paper reports the effects of elevated temperatures on high-frequency/high-speed devices, particularly GaAs metal semiconductor field effect transistors (MESFETs) and high-electron mobility transistors (HEMTs). A novel high-temperature electronic technique (HTET) that was employed to stabilize the performance of these devices at high temperatures will also be discussed. The HTET substantially reduced the leakage currents in the substrate, improved the output resistance and breakdown voltage. The HTET also aids in obtaining comparable gain, at elevated temperatures, to the gain obtained at room temperature. The high temperature effects on high-frequency/high-speed FETs and HTET have also been simulated using LIBRA. The simulation results show strong correlation with the experimental data.

Paper Details

Date Published: 13 October 1995
PDF: 12 pages
Proc. SPIE 2558, Millimeter and Submillimeter Waves II, (13 October 1995); doi: 10.1117/12.224221
Show Author Affiliations
Rajendra Narasimhan, Univ. of Utah (United States)
Robert P. Rozario, Univ. of Utah (United States)
Laurence P. Sadwick, Univ. of Utah (United States)
R. Jennifer Hwu-Sadwick, Univ. of Utah (United States)


Published in SPIE Proceedings Vol. 2558:
Millimeter and Submillimeter Waves II
Mohammed N. Afsar, Editor(s)

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