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Proceedings Paper

Fabrication and infrared absorption of tellurium doped silicon via femtosecond laser irradiation
Author(s): Lingyan Du; Zhiming Wu; Fei Tang; Rui Li; Yadong Jiang
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Paper Abstract

Doping silicon with chalcogens (S, Se, Te) via femtosecond-laser irradiation lead to increase the absorptance of Si in both visible and infrared region, so chalcogens doped silicon have great potential for use in Si-based optoelectronic devices. Tellurium doped silicon was fabricated by femtosecond-laser irradiation of Si with Si/Te bilayer films. The influence of distance between the sample surface and the laser focus in the process of fabricating micro-structured Si was studied. The results show that the sample surface cannot be located in focal plane, nor is far from the focal plane, suitable distance is necessary to produce regular columnar structure. And the surface structure of doped silicon is vitally important to high absorptance. In addition, we report the dependence of surface morphology and optical properties on scanning speed. The absorptance increases over the entire wavelength as the scanning speed decreases.

Paper Details

Date Published: 25 October 2016
PDF: 6 pages
Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 96860Y (25 October 2016); doi: 10.1117/12.2242176
Show Author Affiliations
Lingyan Du, Univ. of Electronic Science and Technology of China (China)
Sichuan Univ. of Science & Engineering (China)
Zhiming Wu, Univ. of Electronic Science and Technology of China (China)
Fei Tang, Univ. of Electronic Science and Technology of China (China)
Rui Li, Univ. of Electronic Science and Technology of China (China)
Yadong Jiang, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 9686:
8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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