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Proceedings Paper

Far-infrared response of high-purity GaAs photoconductors
Author(s): Jam Farhoomand; Robert E. McMurray Jr.; Eugene E. Haller; Elisabeth Bauser; I. Silier
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Paper Abstract

In this paper we report the results of an extensive study on the far-infrared photoconductivity of high purity n-type GaAs. The crystal, which was grown at Max Plank Institute using liquid- phase epitaxy, exhibited the fine structures of the excited state transitions of the residual shallow level impurities. The major peak in the spectral response belongs to the 1s-2p transition, with its responsivity about thirty five times higher than the continuum. At 3.4K detector temperature, 625 mV bias, and 100 Hz chopping frequency the detector responsivity at 35.4 cm-1 (279 micrometers ) was measured to be 0.017 A/W. Under these same conditions, the NEP was 5.9 X 10-14 W/(root)Hz. The dark current at 25 mV bias was 5.6 X 10-14 A.

Paper Details

Date Published: 13 October 1995
PDF: 8 pages
Proc. SPIE 2558, Millimeter and Submillimeter Waves II, (13 October 1995); doi: 10.1117/12.224215
Show Author Affiliations
Jam Farhoomand, Orion TechnoScience, Inc. (United States)
Robert E. McMurray Jr., NASA Ames Research Ctr. (United States)
Eugene E. Haller, Lawrence Berkeley Lab. (United States)
Elisabeth Bauser, Max-Planck-Institut fuer Festkoerperforschung (Germany)
I. Silier, Max-Planck-Institut fuer Festkoerperforschung (Germany)

Published in SPIE Proceedings Vol. 2558:
Millimeter and Submillimeter Waves II
Mohammed N. Afsar, Editor(s)

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