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Proceedings Paper

Plasma shock waves excited by THz radiation
Author(s): S. Rudin; G. Rupper; M. Shur
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Paper Abstract

The shock plasma waves in Si MOS, InGaAs and GaN HEMTs are launched at a relatively small THz power that is nearly independent of the THz input frequency for short channel (22 nm) devices and increases with frequency for longer (100 nm to 1 mm devices). Increasing the gate-to-channel separation leads to a gradual transition of the nonlinear waves from the shock waves to solitons. The mathematics of this transition is described by the Korteweg-de Vries equation that has the single propagating soliton solution.

Paper Details

Date Published: 21 October 2016
PDF: 4 pages
Proc. SPIE 9993, Millimetre Wave and Terahertz Sensors and Technology IX, 99930D (21 October 2016); doi: 10.1117/12.2241984
Show Author Affiliations
S. Rudin, U.S. Army Research Lab. (United States)
G. Rupper, U.S. Army Research Lab. (United States)
M. Shur, Rensselaer Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 9993:
Millimetre Wave and Terahertz Sensors and Technology IX
Neil A. Salmon; Sherif Sayed Ahmed, Editor(s)

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