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Proceedings Paper

The ambipolar operation of lateral and vertical PbSe quantum dots field effect phototransistors
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Paper Abstract

We fabricate and investigate the photoelectrical characterization of PbSe QDs FEpTs Field Effect photo Transistors in lateral (LQFEpT) and vertical architectures (VQFEpT) respectively. Both LQFEpT and VQFEpT apply PbSe quantum dots as active layer, with different channel length of 0.1mm and 678nm respectively. The VQFEpT apply Au/Ag nanowires (NWs) as source transparent electrode connecting with Au source electrode. The ambipolar operation of both FEpTs show low power consumption, delivering high drain current at VSD = VG = ± 4 V. The VQFEpT exhibit higher photocurrent up to 4mA, three orders magnitude higher than that in LQFEpTs (16μA), owing to the superior carrier transportion in the shorter channel. As a result, higher photo responsivity (8×104A/W), specific detectivity (2×1012Jones) and gain (1.3× 105) are achieved in VQFEpT. The all-solution processing vertical architecture provide a convenient way for IR photo detectors with high performances.

Paper Details

Date Published: 25 October 2016
PDF: 6 pages
Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 96860E (25 October 2016); doi: 10.1117/12.2241950
Show Author Affiliations
Haiting Zhang, Tianjin Univ. (China)
Yating Zhang, Tianjin Univ. (China)
Xiaoxian Song, Tianjin Univ. (China)
Yu Yu, Tianjin Univ. (China)
Mingxuan Cao, Tianjin Univ. (China)
Yongli Che, Tianjin Univ. (China)
Jianlong Wang, Tianjin Univ. (China)
Haitao Dai, Tianjin Univ. (China)
Guizhong Zhang, Tianjin Univ. (China)
Jianquan Yao, Tianjin Univ. (China)


Published in SPIE Proceedings Vol. 9686:
8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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