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Proceedings Paper

Nitrogen vacancies in the GaN/AlN heterointerface
Author(s): Yahor V. Lebiadok; Tatyana V. Bezyazychnaya; Konstantin S. Zhuravlev
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Paper Abstract

The results of calculation of nitrogen vacancy geometry in GaN/AlN heterointerface and its comparison with experimental data are discussed in the paper. The methods of calculation of point defects geometry in the GaN/AlN interface within the frameworks of self-consistent field and density functional theory are compared.

Paper Details

Date Published: 24 October 2016
PDF: 6 pages
Proc. SPIE 9994, Optical Materials and Biomaterials in Security and Defence Systems Technology XIII, 99940I (24 October 2016); doi: 10.1117/12.2241944
Show Author Affiliations
Yahor V. Lebiadok, SSPA (Belarus)
Tatyana V. Bezyazychnaya, Institute of Physical Organic Chemistry (Belarus)
Konstantin S. Zhuravlev, Rzhanov Institute of Semiconductor Physics (Russian Federation)


Published in SPIE Proceedings Vol. 9994:
Optical Materials and Biomaterials in Security and Defence Systems Technology XIII
Roberto Zamboni; François Kajzar; Attila A. Szep; Katarzyna Matczyszyn, Editor(s)

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