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Proceedings Paper

Recent results from extreme ultraviolet lithography patterned mask inspection for 11 nm half-pitch generation using projection electron microscope system
Author(s): Ryoichi Hirano; Susumu Iida; Tsuyoshi Amano; Hidehiro Watanabe; Masahiro Hatakeyama; Takeshi Murakami; Kenichi Suematsu; Kenji Terao
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Paper Abstract

Extreme ultraviolet lithography (EUVL) is a promising technique for 1X nm half-pitch (hp) generation lithography. The inspection of patterned EUVL masks is one of the main issues that must be addressed during mask fabrication for manufacture of devices with 11 nm hp feature sizes. We have already designed projection electron microscope (PEM) optics that have been integrated into a new inspection system called Model EBEYE-V30 (where “Model EBEYE” is an EBARA’s model code) and this system seems quite promising for 16 nm hp generation EUVL patterned mask inspection. The defect inspection sensitivity of this system was evaluated via capture of an electron image that was generated at the mask by focusing the image through the projection optics onto a time-delay integration (TDI) image sensor. For increased throughput and higher defect detection sensitivity, a new electron-sensitive area image sensor with a high-speed data processing unit, a bright and stable electron source, and a simultaneous deflector for the image capture area that follows the mask scanning motion have been developed. Using a combination of synchronous deflection and mask scanning, the image can be integrated into both the fixed area image sensor and the TDI image sensor. We describe our experimental results for EUV patterned mask inspection using the above system. Elements have been developed for inspection tool integration and the designed specification has been verified. The system performance demonstrates the defect detectability required for 11 nm hp generation EUVL masks.

Paper Details

Date Published: 10 May 2016
PDF: 6 pages
Proc. SPIE 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 99840M (10 May 2016); doi: 10.1117/12.2241376
Show Author Affiliations
Ryoichi Hirano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Susumu Iida, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuyoshi Amano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hidehiro Watanabe, EUVL Infrastructure Development Ctr., Inc. (Japan)
Masahiro Hatakeyama, Ebara Corp. (Japan)
Takeshi Murakami, Ebara Corp. (Japan)
Kenichi Suematsu, Ebara Corp. (Japan)
Kenji Terao, Ebara Corp. (Japan)

Published in SPIE Proceedings Vol. 9984:
Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology
Nobuyuki Yoshioka, Editor(s)

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