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Proceedings Paper

Comparative study of DPAL and XPAL systems and selection principal of parameters
Author(s): Wei Huang; Rongqing Tan; Zhiyong Li; Gaoce Han; Hui Li
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Paper Abstract

A theoretical model based on common pump structure is proposed to analyze the laser output characteristics of DPAL (Diode pumped alkali vapor laser) and XPAL (Exciplex pumped alkali laser) in this paper. The model predicts that an optical-to-optical efficiency approaching 80% can be achieved for continuous-wave four- and five-XPAL systems with broadband pumping which is several times of pumped linewidth for DPAL. Operation parameters including pumped intensity, temperature, cell’ s length, mixed gas concentration, pumped linewidth and output mirror reflectivity are analyzed for DPAL and XPAL systems basing on the kinetic model. The result shows a better performance in Cs-Ar XPAL laser with requirements of relatively high Ar concentration, high pumped intensity and high temperature. Comparatively, for Cs-DPAL laser, lower temperature and lower pumped intensity should be acquired. In addition, the predictions of selection principal of temperature and cell’s length are also presented. The conception of the equivalent “alkali areal density” is proposed in this paper. It is defined as the product of the alkali density and cell’s length. The result shows that the output characteristics of DPAL (or XPAL) system with the same alkali areal density but different temperatures turn out to be equal. It is the areal density that reflects the potential of DPAL or XPAL systems directly. A more detailed analysis of similar influences of cavity parameters with the same areal density is also presented. The detailed results of continuous-wave DPAL and XPAL performances as a function of pumped laser linewidth and mixed gas pressure are presented along with an analysis of influences of output coupler.

Paper Details

Date Published: 21 October 2016
PDF: 12 pages
Proc. SPIE 9990, High-Power Lasers 2016: Technology and Systems, 99900D (21 October 2016); doi: 10.1117/12.2241296
Show Author Affiliations
Wei Huang, Institute of Electronics (China)
Univ. of Chinese Academy of Sciences (China)
Rongqing Tan, Institute of Electronics (China)
Zhiyong Li, Institute of Electronics (China)
Electronic Engineering Institute of PLA (China)
Gaoce Han, Institute of Electronics (China)
Univ. of Chinese Academy of Sciences (China)
Hui Li, Institute of Electronics (China)
Univ. of Chinese Academy of Sciences (China)

Published in SPIE Proceedings Vol. 9990:
High-Power Lasers 2016: Technology and Systems
Harro Ackermann; Willy L. Bohn; David H. Titterton, Editor(s)

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