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Proceedings Paper

EBL2: high power EUV exposure facility
Author(s): Edwin te Sligte; Norbert Koster; Freek Molkenboer; Peter van der Walle; Pim Muilwijk; Wouter Mulckhuyse; Bastiaan Oostdijck; Christiaan Hollemans; Björn Nijland; Peter Kerkhof; Michel van Putten; André Hoogstrate; Alex Deutz
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Paper Abstract

TNO is building EBL2: a laboratory EUV exposure system capable of operating at high broad band EUV powers and intensities, in which XPS analysis of exposed samples is possible without breaking vacuum. Its goal is to accelerate the development and testing of EUV optics and components by providing a publicly accessible exposure and analysis facility. The system can accept a range of sample sizes, including standard EUV reticles with or without pellicles. In the beam line, EUV masks and other samples can be exposed to EUV radiation in a controlled environment that is representative of actual operating conditions. This contribution will describe the design of the EUV beam line.

Paper Details

Date Published: 5 October 2016
PDF: 8 pages
Proc. SPIE 9985, Photomask Technology 2016, 998520 (5 October 2016); doi: 10.1117/12.2240921
Show Author Affiliations
Edwin te Sligte, TNO (Netherlands)
Norbert Koster, TNO (Netherlands)
Freek Molkenboer, TNO (Netherlands)
Peter van der Walle, TNO (Netherlands)
Pim Muilwijk, TNO (Netherlands)
Wouter Mulckhuyse, TNO (Netherlands)
Bastiaan Oostdijck, TNO (Netherlands)
Christiaan Hollemans, TNO (Netherlands)
Björn Nijland, TNO (Netherlands)
Peter Kerkhof, TNO (Netherlands)
Michel van Putten, TNO (Netherlands)
André Hoogstrate, TNO (Netherlands)
Alex Deutz, TNO (Netherlands)


Published in SPIE Proceedings Vol. 9985:
Photomask Technology 2016
Bryan S. Kasprowicz; Peter D. Buck, Editor(s)

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