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Proceedings Paper

First results on laboratory nano-CT with a needle reflection target and an adapted toolchain
Author(s): P. Stahlhut; K. Dremel; J. Dittmann; J. M. Engel; S. Zabler; A. Hoelzing; R. Hanke
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Paper Abstract

Recently, we introduced a nano Computed Tomography (nano-CT) system based on a customized JEOL scanning electron microscope applying the principle of shadow microscopy and yielding a spatial resolution of approximately 3000lp/mm. The system has been upgraded and now comprises a photon counting PIXIRAD-2 detector as well as a customized nano-positioning stage for object and electron target. The latter is a tungsten needle with a tip radius of 100nm produced by electrochemical etching. Here we present for the first time nano-CT volume images of microstructures within an AlCu29 sample recorded by the upgraded system (XRM-II). The quality of the iteratively reconstructed and regularized volumes is assessed by means of detail visibility and line spread. We found the spatial resolution to be at least 300nm. The image processing chain, in particular geometric misalignment correction is of critical importance for a successful nano-CT measurement with the XRM-II.

Paper Details

Date Published: 3 October 2016
PDF: 10 pages
Proc. SPIE 9967, Developments in X-Ray Tomography X, 99670I (3 October 2016); doi: 10.1117/12.2240561
Show Author Affiliations
P. Stahlhut, Univ. of Würzburg (Germany)
Joint Institute of Advanced Materials and Processes (Germany)
K. Dremel, Univ. of Würzburg (Germany)
J. Dittmann, Univ. of Würzburg (Germany)
J. M. Engel, Univ. of Würzburg (Germany)
Fraunhofer Institue for Integrated Circuits IIS (Germany)
S. Zabler, Univ. of Würzburg (Germany)
Fraunhofer Institue for Integrated Circuits IIS (Germany)
A. Hoelzing, Univ. of Würzburg (Germany)
Fraunhofer Institue for Integrated Circuits IIS (Germany)
R. Hanke, Univ. of Würzburg (Germany)
Fraunhofer Institue for Integrated Circuits IIS (Germany)


Published in SPIE Proceedings Vol. 9967:
Developments in X-Ray Tomography X
Stuart R. Stock; Bert Müller; Ge Wang, Editor(s)

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