Share Email Print
cover

Proceedings Paper

Advances in AlGaInN laser diode technology for defence, security and sensing applications
Author(s): S. P. Najda; P. Perlin; T. Suski; L. Marona; M. Boćkowski; M. Leszczyński; P. Wisnieski; R. Czernecki; G. Targowski
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well, giving rise to new and novel applications including displays and imaging systems, free-space and underwater telecommunications and the latest quantum technologies such as optical atomic clocks and atom interferometry.

Paper Details

Date Published: 25 October 2016
PDF: 7 pages
Proc. SPIE 9992, Emerging Imaging and Sensing Technologies, 99920C (25 October 2016); doi: 10.1117/12.2240555
Show Author Affiliations
S. P. Najda, TopGaN Ltd. (Poland)
P. Perlin, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
T. Suski, Institute of High Pressure Physics (Poland)
L. Marona, Institute of High Pressure Physics (Poland)
M. Boćkowski, TopGaN Ltd (Poland)
Institute of High Pressure Physics (Poland)
M. Leszczyński, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
P. Wisnieski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
R. Czernecki, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
G. Targowski, TopGaN Ltd. (Poland)


Published in SPIE Proceedings Vol. 9992:
Emerging Imaging and Sensing Technologies
Keith L. Lewis; Richard C. Hollins, Editor(s)

© SPIE. Terms of Use
Back to Top