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Proceedings Paper

Defect management on photomasks with dry treatment assistance
Author(s): Irene Shi; Eric Guo; Max Lu
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Paper Abstract

One of the key challenges of photomask manufacture is to achieve defect-free masks. Clean and repair has been applied to manage defects and particles on the mask imported during manufacturing processes. Since photomask patterns become smaller and more complicated as integrated circuit (IC) scaling to 28 nm node and below, the increasingly importance of mask quality compels us continuously research on more effective defect treatment solutions, to achieve mask yield enhancement and on-schedule delivery. In this paper, we would like to introduce new approaches of defect management with dry treatment assistance, according to particular defect types. One is using plasma etching gases of Cl2/O2 to change the properties of glue compounds adhering to the mask surface, and make them removed by conventional cleaning. Another is the application of O2 plasma dry treatment for the benefit of alleviation on scan damage phenomenon, which comes from contamination on the scan area due to excessive repair cycles.

Paper Details

Date Published: 5 October 2016
PDF: 9 pages
Proc. SPIE 9985, Photomask Technology 2016, 998522 (5 October 2016); doi: 10.1117/12.2240469
Show Author Affiliations
Irene Shi, Semiconductor Manufacturing International Corp. (China)
Eric Guo, Semiconductor Manufacturing International Corp. (China)
Max Lu, Semiconductor Manufacturing International Corp. (China)


Published in SPIE Proceedings Vol. 9985:
Photomask Technology 2016
Bryan S. Kasprowicz; Peter D. Buck, Editor(s)

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