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Proceedings Paper

Growth and characterization of Cd1-xZnxSeyTe1-y for radiation detector applications (Conference Presentation)
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Paper Abstract

Our prior investigations showed that alloying CdTe with selenium results in improved material characteristics, such as a reduction in the concentration of secondary-phase particles, better compositional uniformity and less sub-grain boundary networks, as compared to CdTe/CdZnTe. However, by alloying with Se, the band-gap of CdTeSe is significantly reduced from the value for CdTe, which is the main drawback for high-resistivity CdTeSe compounds useful for radiation detection. In order to increase the band-gap, we are now growing Cd1-xZnxSeyTe1-y crystals for detector applications. The effect of Se alloying with CdZnTe will be discussed in terms of the concentration of secondary phases, stress-related defects such as sub-grain boundaries and their networks. Characterization results for the transport properties of the as-grown materials will also be discussed.

Paper Details

Date Published:
PDF: 1 pages
Proc. SPIE 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII, 99680L; doi: 10.1117/12.2240430
Show Author Affiliations
Utpal N. Roy, Brookhaven National Lab. (United States)
Giuseppe S. Camarda, Brookhaven National Lab. (United States)
Yonngong Cui, Brookhaven National Lab. (United States)
Rubi Gul, Brookhaven National Lab. (United States)
Anwar Hossain, Brookhaven National Lab. (United States)
Ge Yang, Brookhaven National Lab. (United States)
Ralph B. James, Brookhaven National Lab. (United States)
Jakub Zázvorka, Charles Univ. in Prague (Czech Republic)
Václav Dedic, Charles Univ. in Prague (Czech Republic)
Jan Franc, Charles Univ. in Prague (Czech Republic)


Published in SPIE Proceedings Vol. 9968:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII
Ralph B. James; Michael Fiederle; Arnold Burger; Larry Franks, Editor(s)

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Growth-and-characterization-of-Cd1-xZnxSeyTe1-y-for-radiation-detector



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