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Proceedings Paper

Identification of dopant-induced point defects and their effect on the performance of CZT detectors (Conference Presentation)
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Paper Abstract

In our prior research we investigated room-temperature radiation detectors (CZT, CMT, CdMgTe, CTS, among other compound semiconductors) for point defects related to different dopants and impurities. In this talk we will report on our most recent research on newly grown CZT crystals doped with In, In+Al, In+Ni, and In+Sn. The main focus will be on the study of dopant-induced point defects using deep-level current transient spectroscopy (i-DLTS). In addition the performance,  product, gamma-ray spectral response and internal electric field of the detectors were measured and correlated with the dopant-induced point defects and their concentrations. Characterization of the detectors was carried out using i-DLTS for the point defects, Pockels effect for the internal electric-field distribution, and -ray spectroscopy for the spectral properties.

Paper Details

Date Published: 2 November 2016
PDF: 1 pages
Proc. SPIE 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII, 996818 (2 November 2016); doi: 10.1117/12.2240331
Show Author Affiliations
Rubi Gul, Brookhaven National Lab. (United States)
Alabama A&M Univ. (United States)
Aleksey E. Bolotnikov, Brookhaven National Lab. (United States)
Giuseppe S. Camarda, Brookhaven National Lab. (United States)
Yonggang Cui, Brookhaven National Lab. (United States)
Václav Didic, Charles Univ. in Prague (Czech Republic)
Stephen U. Egarievwe, Alabama A&M Univ. (United States)
Anwar Hossain, Brookhaven National Lab. (United States)
Utpal N. Roy, Brookhaven National Lab (United States)
Ge Yang, Brookhaven National Lab. (United States)
Ralph B. James, Brookhaven National Lab. (United States)


Published in SPIE Proceedings Vol. 9968:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII
Ralph B. James; Michael Fiederle; Arnold Burger; Larry Franks, Editor(s)

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