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Proceedings Paper

EBL2, a flexible, controlled EUV exposure and surface analysis facility
Author(s): Edwin te Sligte; Norbert Koster; Freek Molkenboer; Alex Deutz
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Paper Abstract

TNO is building EBL2 as a publicly accessible test facility for EUV lithography related development of photomasks, pellicles, optics, and other components. EBL2 will consist of a Beam Line, an XPS system, and sample handling infrastructure. EBL2 will accept a wide range of sample sizes, including EUV masks with or without pellicles. All types of samples will be loaded using a standard dual pod interface. EUV masks returned from EBL2 will retain their NXE compatibility. The Beam Line provides high intensity EUV irradiation from a Sn-fueled EUV source. EUV intensity, pupil, spectrum, and repetition rate are all adjustable. In-situ measurements by ellipsometry will enable real time monitoring of the sample condition. The XPS will be capable of analyzing the full surface area of EUV masks and pellicles, as well as performing angle resolved analysis on smaller samples. Sample transfer between the XPS and the Beam Line will be possible without breaking vacuum.

Paper Details

Date Published: 10 May 2016
PDF: 6 pages
Proc. SPIE 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 99840R (10 May 2016); doi: 10.1117/12.2240302
Show Author Affiliations
Edwin te Sligte, TNO (Netherlands)
Norbert Koster, TNO (Netherlands)
Freek Molkenboer, TNO (Netherlands)
Alex Deutz, TNO (Netherlands)


Published in SPIE Proceedings Vol. 9984:
Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology
Nobuyuki Yoshioka, Editor(s)

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