Share Email Print
cover

Proceedings Paper

Discussions on switching mechanism for ultimate reduction in energy consumption for STT-MRAM
Author(s): H. Yoda; N. Shimomura
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Critical switching current, ICsw, of STT (Spin Transfer Torque)-MRAM has been reduced by several orders with PMA (Perpendicular Magnetic Anisotropy)-MTJs and the state-of-the-art writing-charge, Qw, becomes the order of 100fC. With the small Qw, MRAM starts to save energy consumption even for mobile applications. The key to the Qw reduction is a development of MTJs having higher writing-efficiency. Especially coherent switching of storage-layer magnetization was found to be the root key to the high efficiency.

Paper Details

Date Published: 26 September 2016
PDF: 9 pages
Proc. SPIE 9931, Spintronics IX, 993117 (26 September 2016); doi: 10.1117/12.2239771
Show Author Affiliations
H. Yoda, Toshiba Corp. (Japan)
N. Shimomura, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 9931:
Spintronics IX
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

© SPIE. Terms of Use
Back to Top