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Proceedings Paper

Integration of a niobium oxide selector on a tantalum oxide memristor by local oxidation using Joule heating
Author(s): Juan J. Díaz León; Kate J. Norris; John F. Sevic; Nobuhiko P. Kobayashi
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Paper Abstract

Memristive devices are two-terminal electrical switches with electrical resistance that depends on a state variable equivalent to electrical charge. In practice, multiple memristive devices are arranged into a crossbar array to form such components as memory and logic. For reliable operation of the crossbar array, electrical current sneak paths need to be eliminated by combining a highly nonlinear component, known as selector, with a memristive device. This ensures the explicit selection of an intended memristive device without disturbing the states of surrounding devices. However, integrating a selector onto a memristive device at the circuit level is not an appealing option for large scale integration. In this paper, a monolithic structure that contains a memristive device and a self-aligned selector is presented. A niobium oxide (NbO2) selector is built directly on a tantalum oxide (TaOx) memristive device by fist depositing an Nb layer on a TaOx memristive device and then forming NbO2 at the Nb/TaOx interface. Discussion will focus on an experimental and theoretical assessment on the electrothermal behavior of the Nb/TaOx structure that results in NbO2/TaOx selector/memristive devices.

Paper Details

Date Published: 27 September 2016
PDF: 5 pages
Proc. SPIE 9924, Low-Dimensional Materials and Devices 2016, 99240I (27 September 2016); doi: 10.1117/12.2239609
Show Author Affiliations
Juan J. Díaz León, Univ. of California, Santa Cruz (United States)
NASA Ames Research Ctr. (United States)
Kate J. Norris, Univ. of California, Santa Cruz (United States)
NASA Ames Research Ctr. (United States)
John F. Sevic, Univ. of California, Santa Cruz (United States)
NASA Ames Research Ctr. (United States)
Nobuhiko P. Kobayashi, Univ. of California, Santa Cruz (United States)
NASA Ames Research Ctr. (United States)


Published in SPIE Proceedings Vol. 9924:
Low-Dimensional Materials and Devices 2016
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam; Albert V. Davydov, Editor(s)

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