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Proceedings Paper

Coupling between electrolyte and organic semiconductor in electrolyte-gated organic field effect transistors (Conference Presentation)
Author(s): Fabio Biscarini; Michele Di Lauro; Marcello Berto; Carlo A. Bortolotti; Yves H. Geerts; Dominique Vuillaume

Paper Abstract

Organic field effect transistors (OFET) operated in aqueous environments are emerging as ultra-sensitive biosensors and transducers of electrical and electrochemical signals from a biological environment. Their applications range from detection of biomarkers in bodily fluids to implants for bidirectional communication with the central nervous system. They can be used in diagnostics, advanced treatments and theranostics. Several OFET layouts have been demonstrated to be effective in aqueous operations, which are distinguished either by their architecture or by the respective mechanism of doping by the ions in the electrolyte solution. In this work we discuss the unification of the seemingly different architectures, such as electrolyte-gated OFET (EGOFET), organic electrochemical transistor (OECT) and dual-gate ion-sensing FET. We first demonstrate that these architectures give rise to the frequency-dependent response of a synapstor (synapse-like transistor), with enhanced or depressed modulation of the output current depending on the frequency of the time-dependent gate voltage. This behavior that was reported for OFETs with embedded metal nanoparticles shows the existence of a capacitive coupling through an equivalent network of RC elements. Upon the systematic change of ions in the electrolyte and the morphology of the charge transport layer, we show how the time scale of the synapstor is changed. We finally show how the substrate plays effectively the role of a second bottom gate, whose potential is actually fixed by the pH/composition of the electrolyte and the gate voltage applied.

Paper Details

Date Published: 2 November 2016
PDF: 1 pages
Proc. SPIE 9943, Organic Field-Effect Transistors XV, 99430B (2 November 2016); doi: 10.1117/12.2239536
Show Author Affiliations
Fabio Biscarini, Univ. degli Studi di Modena e Reggio Emilia (Italy)
Michele Di Lauro, Univ. degli Studi di Modena e Reggio Emilia (Italy)
Marcello Berto, Univ. degli Studi di Modena e Reggio Emilia (Italy)
Carlo A. Bortolotti, Univ. degli Studi di Modena e Reggio Emilia (Italy)
Yves H. Geerts, Univ. Libre de Bruxelles (Belgium)
Dominique Vuillaume, Ctr. National de la Recherche Scientifique (France)


Published in SPIE Proceedings Vol. 9943:
Organic Field-Effect Transistors XV
Iain McCulloch; Oana D. Jurchescu, Editor(s)

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