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Ga2O3 as Both Gate Dielectric and Surface Passivation via Sol-Gel Method at Room Ambient
Author(s): Ahmet Kaya; Jianyi Gao; Hilal Cansizoglu; Ahmed S. Mayet; Hasina H. Mamtaz; Soroush GhandiParsi; Srabanti Chowdhury; M. Saif Islam
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Paper Abstract

We report the use of sol-gel method at room ambient to grow nanoscale thin film of Ga2O3 on Si surface for both surface passivation and gate dielectric. The admittance measurements were carried out in the frequency range of 20 kHz-1 MHz at room temperature. Voltage dependent profile of interfacial trap density (Dit) was obtained by using low and high frequency capacitance method. The capacitance (C)-voltage (V) analyses show that the structures have a low interfacial trap density (Dit) of 1x1012 cm-2eV-1. The Ga2O3 thin film synthesized via sol-gel method directly on devices to function as a gate dielectric film is found to be very effective. We also present our experimental results for a number of gate dielectric and device passivation applications.

Paper Details

Date Published: 19 September 2016
PDF: 8 pages
Proc. SPIE 9957, Wide Bandgap Power Devices and Applications, 995709 (19 September 2016); doi: 10.1117/12.2239177
Show Author Affiliations
Ahmet Kaya, Univ. of California, Davis (United States)
Jianyi Gao, Univ. of California, Davis (United States)
Hilal Cansizoglu, Univ. of California, Davis (United States)
Ahmed S. Mayet, Univ. of California, Davis (United States)
Hasina H. Mamtaz, Univ. of California, Davis (United States)
Soroush GhandiParsi, Univ. of California, Davis (United States)
Srabanti Chowdhury, Univ. of California, Davis (United States)
M. Saif Islam, Univ. of California, Davis (United States)


Published in SPIE Proceedings Vol. 9957:
Wide Bandgap Power Devices and Applications
Mohammad Matin; Abdul A. S. Awwal; Achyut K. Dutta, Editor(s)

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