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Proceedings Paper

Simple and advanced ferromagnet/molecule spinterfaces
Author(s): M. Gruber; F. Ibrahim; F. Djedhloul; C. Barraud; G. Garreau; S. Boukari; H. Isshiki; L. Joly; E. Urbain; M. Peter; M. Studniarek; V. Da Costa; H. Jabbar; H. Bulou; V. Davesne; U. Halisdemir; J. Chen; D. Xenioti; J. Arabski; K. Bouzehouane; C. Deranlot; S. Fusil; E. Otero; F. Choueikani; K. Chen; P. Ohresser; F. Bertran; P. Le Fèvre; A. Taleb-Ibrahimi; W. Wulfhekel; S. Hajjar-Garreau; P. Wetzel; P. Seneor; R. Mattana; F. Petroff; F. Scheurer; W. Weber; M. Alouani; E. Beaurepaire; M. Bowen
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Paper Abstract

Spin-polarized charge transfer between a ferromagnet and a molecule can promote molecular ferromagnetism 1, 2 and hybridized interfacial states3, 4. Observations of high spin-polarization of Fermi level states at room temperature5 designate such interfaces as a very promising candidate toward achieving a highly spin-polarized, nanoscale current source at room temperature, when compared to other solutions such as half-metallic systems and solid-state tunnelling over the past decades. We will discuss three aspects of this research. 1) Does the ferromagnet/molecule interface, also called an organic spinterface, exhibit this high spin-polarization as a generic feature? Spin-polarized photoemission experiments reveal that a high spin-polarization of electronics states at the Fermi level also exist at the simple interface between ferromagnetic cobalt and amorphous carbon6. Furthermore, this effect is general to an array of ferromagnetic and molecular candidates7. 2) Integrating molecules with intrinsic properties (e.g. spin crossover molecules) into a spinterface toward enhanced functionality requires lowering the charge transfer onto the molecule8 while magnetizing it1,2. We propose to achieve this by utilizing interlayer exchange coupling within a more advanced organic spinterface architecture. We present results at room temperature across the fcc Co(001)/Cu/manganese phthalocyanine (MnPc) system9. 3) Finally, we discuss how the Co/MnPc spinterface’s ferromagnetism stabilizes antiferromagnetic ordering at room temperature onto subsequent molecules away from the spinterface, which in turn can exchange bias the Co layer at low temperature10. Consequences include tunnelling anisotropic magnetoresistance across a CoPc tunnel barrier11. This augurs new possibilities to transmit spin information across organic semiconductors using spin flip excitations12.

Paper Details

Date Published: 26 September 2016
PDF: 10 pages
Proc. SPIE 9931, Spintronics IX, 99313O (26 September 2016); doi: 10.1117/12.2239067
Show Author Affiliations
M. Gruber, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)
F. Ibrahim, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)
F. Djedhloul, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)
C. Barraud, Mixte de Physique CNRS/Thales (France)
Univ. Paris Sud (France)
G. Garreau, Institut de Science des Materiaux de Mulhouse, CNRS, Univ. de Haute-Alsace (France)
S. Boukari, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)
H. Isshiki, Karlsruhe Institute of Technology (Germany)
L. Joly, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)
E. Urbain, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)
M. Peter, Karlsruhe Institute of Technology (Germany)
M. Studniarek, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)
V. Da Costa, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)
H. Jabbar, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)
H. Bulou, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)
V. Davesne, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)
U. Halisdemir, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)
J. Chen, Karlsruhe Institute of Technology (Germany)
D. Xenioti, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)
J. Arabski, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)
K. Bouzehouane, Mixte de Physique CNRS/Thales (France)
Univ. Paris Sud (France)
C. Deranlot, Mixte de Physique CNRS/Thales (France)
Univ. Paris Sud (France)
S. Fusil, Mixte de Physique CNRS/Thales (France)
Univ. Paris Sud (France)
E. Otero, Synchrotron SOLEIL (France)
F. Choueikani, Synchrotron SOLEIL (France)
K. Chen, Synchrotron SOLEIL (France)
P. Ohresser, Synchrotron SOLEIL (France)
F. Bertran, Synchrotron SOLEIL (France)
P. Le Fèvre, Synchrotron SOLEIL (France)
A. Taleb-Ibrahimi, Synchrotron SOLEIL (France)
W. Wulfhekel, Karlsruhe Institute of Technology (Germany)
S. Hajjar-Garreau, Institut de Science des Materiaux de Mulhouse, CNRS, Univ. de Haute-Alsace (France)
P. Wetzel, Institut de Science des Materiaux de Mulhouse, CNRS, Univ. de Haute-Alsace (France)
P. Seneor, Mixte de Physique CNRS/Thales (France)
Univ. Paris Sud (France)
R. Mattana, Mixte de Physique CNRS/Thales (France)
Univ. Paris Sud (France)
F. Petroff, Mixte de Physique CNRS/Thales (France)
Univ. Paris Sud (France)
F. Scheurer, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)
W. Weber, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)
M. Alouani, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)
E. Beaurepaire, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)
M. Bowen, Institut de Physique et Chimie des Matériaux de Strasbourg, Univ. de Strasbourg, CNRS (France)


Published in SPIE Proceedings Vol. 9931:
Spintronics IX
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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